leshan radio company, ltd. L2SA1235FLT1G sot?23 device marking shipping L2SA1235FLT1G a5f 3000/tape & reel l2sa1235flt3g a5f 10000/tape & reel general purpose transistor ordering information description l2sa1365flt1g is a mini package silicon pnp epitaxial transistor, . feature small collector to emitte r saturation voltage. vce(sat) =-0.3v max excellent linearity of dc forward current gain. super mini package for easy mounting application for hybrid ic,small type machine low frequency voltage amplify application. we declare that the material of product compliance with rohs requirements. maximum ratings ta=25 symbol parameter ratings unit v cbo collector to base voltage -50 v v ceo collector to emitter voltage -50 v v ebo emitter to base voltage -6 v i o collector current -200 ma p c collector dissipation 200 mw t j junction temperature 150 t stg storage temperature -55150 electrical characteristics ta=25 it is designed for low frequency voltage application. (@ic=-100ma,ib=-10ma) it shows hfe classification in below table. limits parameter symbol test conditions min typ max unit c to e break down voltage v(br) ceo i c =-100a ,r be = -50 - - v collector cut off current i cbo v cb =-50v, i e =0ma - - -0.1 a emitter cut off current i ebo v eb =-6v, i c =0ma - - -0.1 a dc forward current gain hfe v ce =-6v, i c =-1ma 150 - 800 dc forward current gain hfe v ce =-6v, i c =-0.1ma 90 - - c to e saturation vlotage vce(sat) i c =-100ma ,i b =-10ma - - -0.3 v gain bandwidth product ft v ce =-6v, i e =10ma - 200 - mhz collector output capacitance cob v cb =-6v, i e =0,f=1mhz - 4 - pf noise figure nf v ce =-6v, i e =0.3ma,f=100hz,rg=10k - - 20 db item item 150300 250500 400800 2 1 3 rev.o 1/3
leshan radio company, ltd. L2SA1235FLT1G collector dissipation vs.ambient temperture 0 50 100 150 200 250 0 25 50 75 100 125 150 ambient temperture ta () collector dissipation pc (mw) common emitter output ib=0 0.02ma 0.04ma 0.06ma 0.08ma 0.10ma 0.12ma 0.14ma 0.16ma 0.18ma -0 -10 -20 -30 -40 -50 -0 -1 -2 -3 -4 -5 collector emitter voltage vce(v) collector current ic(ma) ta=25 common emitter transfer -0 -10 -20 -30 -40 -50 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 base to emitter voltage vbe(v) collector current ic(ma) ta=25 vce=-6v dc forward current gain vs. collector current 1 10 100 1000 10000 -0.1 -1 -10 -100 -1000 collector current ic(ma) relative value of dc forward current gain hfe ta=25 vce=-6v 100(@ic=-1ma) gain band width product vs. emitter current 0 50 100 150 200 250 0.1 1 10 100 emitter current ie(ma) gain band width product ft(mhz) ta=25 vce=-6v collector output capacitance vs. collector to base voltage 0.1 1 10 100 -0.1 -1 -10 -100 collector to base voltage vcb(v) collector output capacitance cob(pf) ta=25 ie=0 f=1mhz rev.o 2/3
d j k l a c b s h g v 12 mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. inches millimeters dim min max min max a 0.1102 0.1197 2.80 3.04 b 0.0472 0.0551 1.20 1.40 c 0.0350 0.0440 0.89 1.11 d 0.0150 0.0200 0.37 0.50 g 0.0701 0.0807 1.78 2.04 h 0.0005 0.0040 0.013 0.100 j 0.0034 0.0070 0.085 0.177 k 0.0140 0.0285 0.35 0.69 l 0.0350 0.0401 0.89 1.02 s 0.0830 0.1039 2.10 2.64 v 0.0177 0.0236 0.45 0.60 pin 1. base 2. emitter 3. collector 0.031 0.8 3 L2SA1235FLT1G leshan radio company, ltd. sot-23 rev.o 3/3
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